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Research Article

Batch fabrication of MoS2 devices directly on growth substrates by step engineering

Lu Li1,2, Yalin Peng1,2, Jinpeng Tian1,2, Fanfan Wu1,2, Xiang Guo1,2, Na Li3, Wei Yang1,2, Dongxia Shi1,2, Luojun Du1,2(), Guangyu Zhang1,2,3()
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
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We demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering. By introducing substrate steps on growth substrate sapphire, high-κ dielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS2.

Abstract

Monolayer molybdenum disulfide (MoS2) has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness, dangling-bond-free flat surface, and high electrical quality. Currently, high-quality monolayer MoS2 wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication, and thus transfer processes to a suitable substrate are typically required before the device can be processed. Here, we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering. By introducing substrate steps on growth substrate sapphire, high-κ dielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS2. For the substrate with a maximum step density of 100 μm−1, the gate capacitance can reach ~ 1.87 μF∙cm−2, while the interface trap state density (Dit) can be as low as ~ 7.6 × 1010 cm−2∙eV−1. The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of > 96%, holding great promise for large-scale two-dimensional (2D) integrated circuits.

Keywords

substrate step engineeringatomic layer depositionhigh-κ dielectricmolybdenum disulfidetop-gate field-effect transistor

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Nano Research
Volume 16 Issue 11,
November 2023
Pages 12794-12799
DOI: 10.1007/s12274-023-6180-2
Cite this article:
Li L, Peng Y, Tian J, et al. Batch fabrication of MoS2 devices directly on growth substrates by step engineering. Nano Research, 2023, 16(11): 12794-12799. https://doi.org/10.1007/s12274-023-6180-2
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