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Research Article | Open Access

Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing

Zheng FanaJiSheng LiangaJun-Liang ChenbYing Pengb,c,( )Huajun LaidJian NongbChengyan LiubWangyang DingaLei Miaoa,( )
Guangxi Key Laboratory for Relativity Astrophysics, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, Guangxi Key Laboratory of Information Material, Guilin University of Electronic Technology, Guilin, 541004, China
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China
Guangxi Academy of Sciences, Nanning, 530007, China

Peer review under responsibility of The Chinese Ceramic Society.

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Graphical Abstract

Abstract

SiGe is recognised as an excellent thermoelectric material with superior mechanical properties and thermal stability in regions with high temperatures. This study explores a novel strategy for co-regulating thermoelectric transport parameters to achieve high thermoelectric properties of p-type SiGe in the mid-temperature region by incorporating nano-TaC into SiGe combined ball milling with spark plasma sintering. By optimizing the amount of TaC in the SiGe matrix, the power factors were significantly increased due to the modulation doping effect based on the work function matching of SiGe with TaC. Simultaneously, the ensemble effect of the nanostructure leads to a significant decrease in thermal conductivity. Thus, a high ZT of 1.06 was accomplished at 873 K, which is 64 % higher than that of typical radioisotope thermoelectric generator. Our research offers a novel strategy for expanding and enhancing the thermoelectric properties of SiGe materials in the medium temperature range.

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Journal of Materiomics
Pages 984-991
Cite this article:
Fan Z, Liang J, Chen J-L, et al. Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing. Journal of Materiomics, 2023, 9(5): 984-991. https://doi.org/10.1016/j.jmat.2023.03.004

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Received: 23 January 2023
Revised: 02 March 2023
Accepted: 15 March 2023
Published: 10 April 2023
© 2023 The Authors.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

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