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Research Article | Open Access | Online First

Suppressing weak-light voltage attenuation in Sb₂S₃ indoor photovoltaics using Li-doped TiO₂ layer

Kefei Wu^¹, Hui Deng^{¹^,²}

(), Xinxin Feng^¹, Jinwei Hong^¹, Guidong Wang^¹, Muhammad Ishaq^⁴, Caixia Zhang^¹, Qiao Zheng^¹, Weihuang Wang^¹, Jionghua Wu^¹, Shuying Cheng^{¹^,²^,³}

()

1College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China

2Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China

3Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou 213164, China

4Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

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The Li-doped TiO₂ film as an electron transport layer is used in Sb₂S₃ indoor photovoltaic cell to overcome the weak-light open-circuit voltage (V_OC) loss. Under indoor light of 1000 lux intensity, the Sb₂S₃ device achieves indoor power conversion efficiency of 12.7%.

Abstract

Antimony sulfide (Sb₂S₃) thin film have a suitable band gap (1.73 eV) and high absorption coefficient, indicating potential prospects in indoor photovoltaics. The open-circuit voltage (V_OC) attenuation under indoor weak light limits the performance and application, which is affected by the heterojunction interface quality. Hence, we propose a hole transport layer free Sb₂S₃ indoor photovoltaic cell using Li-doped TiO₂ as the electron transport layer to overcome weak-light V_OC loss. The Li-doped TiO₂ films prepared by spray pyrolysis LiCl additive precursor reveal higher surface potentials, enhancing electron collections. The doped interface also promoted subsequent grain growth of Sb₂S₃ thin film. The champion device, configured as FTO/TiO₂:Li/Sb₂S₃/Au, achieves an efficiency of 6.12% with an optimal Li doping ratio of 8% in the TiO₂ layer. The Li introduction at the junction interface suppresses the photocarrier recombinations under indoor light, thus improving device performance. The indoor power conversion efficiency of the Li-TiO₂ based Sb₂S₃ device reaches 12.7% under the irradiation of 1000-lux LED, showing 48% improvement compared with the undoped device. The Li-doped TiO₂/Sb₂S₃ photovoltaic device demonstrates significant advantages, particularly in cold and monochromatic light conditions, opening new prospects for indoor application.

Keywords

Sb₂S₃ indoor photovoltaics Li-doped TiO₂ V_OC improvement conversion efficiency

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References

[1]

Chen, J. W.; Li, G. Y.; Xu, Z. H.; Xu, C. C.; Naveed, F.; Liu, B.; Zhang, Y.; Zhou, R.; Chen, C.; Wang, M. T. et al. Recent advances and prospects of solution-processed efficient Sb₂S₃ solar cells. Adv. Funct. Mater. 2024, 34, 2313676.

Light	Device group	V_OC (mV)	J_SC (mA/cm²)	FF (%)	PCE (%)
AM 1.5 G	Undoped TiO₂	645	15.44	50.54	5.03
AM 1.5 G	8%-Li-doped TiO₂	713	17.04	50.28	6.12
LED 1000 lux(warm light)	Undoped TiO₂	449	0.129	48.91	7.98
LED 1000 lux(warm light)	8%-Li-doped TiO₂	511	0.137	54.86	11.30
LED 1000 lux(cold light)	Undoped TiO₂	452	0.133	51.15	8.60
LED 1000 lux(cold light)	8%-Li-doped TiO₂	518	0.149	55.99	12.73

Suppressing weak-light voltage attenuation in Sb2S3 indoor photovoltaics using Li-doped TiO2 layer