Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.
Publications
- Article type
- Year
Article type
Year
Research Article
Issue
Nano Research 2016, 9 (3): 774-778
Published: 09 January 2016
Downloads:41
Total 1