The development of highly efficient, solution-processable, and environmentally stable perovskite quantum dots (PQDs) is crucial for their accurate high-resolution patterning and subsequently enabling the practical deployment of PQD based emissive display devices. This study presents an innovative strategy for integrating all-inorganic PQDs and ultraviolet (UV) crosslinkable acrylate polymer at a structural and functional level. The achievement is accomplished by meticulous design and one-pot synthesis of UV-crosslinkable CsPbX₃ (X = Cl, Br, I) PQDs solution, which exhibit outstanding environmental stability. Leveraging the solution-processable characteristics of the resulting UV-crosslinkable PQDs, precise patterning of high-resolution (2 µm, 7608 pixels·in.⁻¹) and colorful PQDs microarrays can be readily achieved through inkjet printing and high-throughput photolithography (~ 2 µm in pitch line/space patterning). The UV cross-linked process guarantees a homogeneous distribution of PQDs, effectively mitigating coffee ring effect and improving the overall quality of stereoscopic microarrays. The photo-cured PQDs film, which undergoes free radical photopolymerization, displays an impressive photoluminescence quantum yield (PL QY) of up to 89.2%, reaching 98% of the value observed in the solution state. The approach outlined in this research is both cost-effective and pragmatic, exhibiting tremendous promise for diverse system-level integrated optoelectronic devices, such as ultra-high-resolution micro-light-emitting device (micro-LED) displays.

The practical application of all-inorganic semiconductor lead halide perovskite nanocrystals (LHP NCs) has been limited by their poor stability. Recently, a lot of research on core–shell structure has been done to improve the stability of perovskite NCs, but the effect was far from the application requirements. Herein, we, for the first time, report a convenient approach to synthesize organic–inorganic double shell CsPbBr₃@SiO₂@polystyrene (PS) NCs with an inter-core of CsPbBr₃, the intermediate layer of SiO₂ shell, and outmost PS shell. Particularly, the CsPbBr₃@SiO₂@PS NCs maintained more than 90% of their initial photoluminescence (PL) intensity under one month's ultraviolet lamp irradiation or in 85 °C and 85% relative humidity (RH) condition. The white-light-emitting-diodes (WLEDs) were fabricated by encapsulating commercial InGaN chip with CsPbBr₃@SiO₂@PS NCs and K₂SiF₆:Mn⁴⁺ (KSF:Mn⁴⁺) phosphor with a luminous efficacy of ~ 100 lm/W at 20 mA current and a color gamut of 128% of the National Television Standards Committee (NTSC) standard. In addition, these WLEDs still maintain 91% of the initial luminous efficacy after 1200 h of continuous lighting. These results demonstrated that double shell-protected CsPbBr₃ perovskite NCs have great potential in the field of WLEDs.

All-inorganic cesium lead halide perovskite nanocrystals (CsPbX₃, X = Cl, Br, I) have attracted considerable scientific and technological interest due to their precise bandgap tunability, high color purity and efficient luminescence. Nevertheless, their poor stability in harsh conditions such as moisture, ultraviolet (UV) light irradiation and high temperature, is a major obstacle for their further commercial applications. Herein, by simply using a new type of precursor, namely "HPbX₃" (X = Cl, Br, I), we can achieve the coordination equilibrium for Pb precursors during reaction and obtain high-quality perovskite nanocrystals with tremendously enhanced luminous efficiency and chemical stability based on hot-injection method. The prepared α-CsPbI₃ nanocrystals exhibit an extremely high photoluminescence quantum yield of 96% and keep stable in air for more than two months without any post-synthesis treatment. Moreover, stability evaluations under UV light irradiation, water or thermal impact are also performed and the results show substantially improved stability of these nanocrystals as compared with the samples prepared using traditional PbI₂ as precursor. Through temperature-dependent (10–300 K) steady and transient spectral analysis combined with compositional measurements, it is revealed that the lower structural defect density, which is guaranteed by abundant halogen when using HPbX₃ as precursor, is the most important reason for such performance enhancement.