Focused ion beam (FIB) processing with low-energy ions has become a standard technique for the manipulation of nanostructures. Many underlying ion beam effects that deviate from conventional high-energy ion irradiation of bulk systems are considered today; however, ion channeling with its consequence of significant deeper penetration depth has been only theoretically investigated in this regime. We present here an experimental approach to determine the channeling of low-energy ions in crystalline nanoparticles by measuring the sputter yield derived from scanning electron microscopy (SEM) images taken after irradiation under various incident ion angles. Channeling maps of 30 and 20 keV Ga⁺ ions in Ag nanocubes have been identified and fit well with the theory. Indeed, channeling has a significant impact on the transport of energetic ions in crystals due to the large critical angle at low ion energies, thus being relevant for any FIB-application. Consequently, the obtained sputter yield clearly differs from amorphous materials; therefore, it is recommended not to rely only on, e.g., ion distribution depths predicted by standard Monte-Carlo (MC) algorithms for amorphous materials.