Developing scintillators with high light yield (LY), superior irradiation stability, and weak afterglow is of significance for the realization of low-dose high-resolution X-ray excited optical luminescence (XEOL) imaging. Lanthanide doped fluoride nanoparticles possess low toxicity, superior environmental stability, facial fabrication process, and tunable emissions, which are appropriate candidates for the next generation nanoscintillators (NSs). However, the low LY and strong positive hysteresis greatly restrict their practical application. Here, we propose an effective strategy that engineers energy gap to significantly enhance the LY. Our results verify that the tetragonal LiLuF₄ host benefits the crystal level splitting of Tb³⁺ ions, which greatly promotes the electrons population on the Tb³⁺:⁵D₄ level followed by the enhanced LY. The LY of LiLuF₄:Tb@LiLuF₄ NSs is calculated to be ~ 31,169 photons/MeV, which is much higher than the lead halide perovskite colloidal CsPbBr₃ (~ 21,000 photons/MeV) and LuAG:Ce (~ 22,000 photons/MeV) scintillators. Moreover, the positive hysteresis is remarkably restricted after coating a thin shell. The X-ray detection limit and spatial resolution are measured to be ~ 21.27 nGy/s and ~ 7.2 lp/mm, respectively. We further verify that this core/shell NS can be employed as scintillating screen to realize XEOL imaging under the low dose rate of 13.86 μGy/s. Our results provide an effective route to develop high performance NSs, which will promote great opportunities for the development of low-dose high-resolution XEOL imaging devices.

Ultra-broadband near-infrared (NIR) luminescence of bismuth ions in glass is widely used, but the stability problem of Bi NIR centers limits its practical application. Therefore, in this work, the original local excess charge model that can effectively regulate the Bi NIR luminescence behavior was expanded and supplemented in bismuth doped yttrium aluminum-silicate glass. The statistical excess charge field around Bi was built up via either introduction of glass modifier (Y³⁺) or substitution of silicon by different glass former ions with a valence state lower than +4 (Al³⁺) in yttrium aluminumsilicate glass. As a result, the behavior of Bi NIR centers (i.e., the valence states of Bi, the intensities and peak positions of absorption and NIR emission) was determined. Also, the distribution characteristics of Bi NIR centers were proposed. Bi⁰ NIR centers are preferentially located in the multimember rings of silicon, while Bi⁺ NIR centers are situated at the interstices of silicon network. This work could solve a problem to stabilize Bi NIR centers in yttrium aluminumsilicate glass, even other alkali metals and alkali metals (Li/Na/K, Mg/Ca/Sr/Ba, etc.) aluminumsilicate glass, thus establishing the experimental and theoretical supports for the design of Bi-doped laser glasses and fabrication of fibers in future. This work also verified the effectiveness and universality of the local excess charge model, providing a strategy for stabilizing the valance state of other multivalent luminescent ions (i.e. Eu, Ce, Cu, Ag, Sn) and their distribution in glass network structure.