The controlled growth of perovskite nanowires along predefined orientations offers significant advantages over traditional post-growth assembly strategies, facilitating their integration into compact functional devices. In this study, a nanogroove-confined recrystallization process is designed for the precise and scalable growth of oriented perovskite nanowires with millimeter lengths and high crystallinity. The process involves annealing a perovskite-containing solution sandwiched between a hydrophobic flat silicon wafer and a hydrophilic faceted sapphire wafer featuring parallel nanogrooves at 90 °C under ambient conditions. By customizing the electrode design, the nanowire arrays can be seamlessly integrated into monolithic photodetectors with large detection areas or into photodetector arrays with multiple microscale detector cells on their growth substrate. This in-situ integration strategy eliminates the need for complex post-growth processing steps. The photodetectors exhibit exceptional responsivity (38.4 A·W⁻¹), detectivity (4.35 × 10¹³ Jones), and response times in tens of microseconds across the ultraviolet–visible–near infrared ray (UV–vis–NIR) spectrum. The seamless integration of the nanowire photodetectors opens avenues for practical applications, including high-contrast optical imaging and efficient data transmission through Morse code encoding, leveraging their high on-off current ratios and rapid response. This innovative approach streamlines the growth of highly oriented perovskite nanowires, facilitating their integration into compact optoelectronic devices.

Controlling the vapor-deposited nanoribbons to grow along a consistent orientation will enable the desired in situ integration of functional devices, representing a major technological advance compared to post-growth processing strategies. In this work, n-type F₁₆CuPc molecules are self-assembled into horizontally-oriented nanoribbons with a consistent growth axis after creating periodic hydrophobic nanogrooves on a sapphire surface. Consequently, electrodes are deposited directly on the growth substrate to enable in situ fabrication of photodetectors. Depending on the deposited electrodes, these horizontally-oriented nanoribbons are connected to form a monolithic photodetector with a large sensing area or an on-chip array of photodetectors with multiple detector units. This in situ integration strategy avoids potential structural damage and contamination from impurities associated with post-growth processing steps. Therefore, the vapor-deposited nanoribbons can retain their high quality during the device manufacturing process, which contributes to performance improvement. As a result, the in-situ integrated F₁₆CuPc photodetectors exhibit a sensitive response in the ultraviolet–visible–near-infrared (UV–vis–NIR) region. The response time is on the order of tens of milliseconds, the fastest record ever for the F₁₆CuPc-based photodetectors. Furthermore, statistics from an array of 6 × 6 photodetectors show little variation in their sensitivity and response time, and hence this in situ fabrication scheme will contribute to the implementation of on-chip integrated photodetectors with consistent performance based on bottom-up nanoribbons. Overall, this self-oriented growth provides a versatile option to achieve desired in-situ integrated functional devices based on bottom-up nanoribbons.