To obtain high-entropy carbide (HEC) joints with excellent high-temperature performance, a (HfZrTiTaNb)C HEC joint featuring a direct diffusion-bonded interface with a Nb-based interlayer was successfully fabricated at relatively low temperatures of 1150–1250 °C for 60 min under 10 MPa. Starting from a modified Ni/Nb/Ni composite interlayer with a Nb content of > 64 at%, an alloyed Nb2Ni layer was constructed in situ by accelerating the directional diffusion of Ni atoms from the high-entropy interface into the remaining pure Nb through the Ni‒Nb eutectic liquid. Moreover, the excess liquid phase was squeezed out of the bonding region, ensuring the absence of Ni-based compounds. Leveraging the intrinsic interfacial stability and sluggish diffusion effect, the HEC with its original lattice structure, was capable of developing diffusion bonding with the Nb2Ni layer instead of interacting with the liquid phase. The high reliability of the HEC/Nb2Ni bonded interface was confirmed by the coherence of (1
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Journal of Advanced Ceramics 2025, 14(1): 9221010
Published: 17 January 2025
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