0.96(K_0.5Na_0.5-zLi_z) (Nb_0.92Sb_0.08)O₃-0.04(Ca_0.5Sr_0.5)ZrO₃ [(KN_0.5-zL_z)NS-CSZ] piezoceramics (0 ≤ z ≤ 0.04) were aligned in the [001] orientation using 3% (in mole) NaNbO₃ templates with a large Lotgering factor (>97%). Their crystal structures transformed from the orthorhombic-pseudocubic (OP) structure to the orthorhombic-tetragonal-pseudocubic (O-T-P) structure with an increasing z. The P structure was interpreted as a rhombohedral R3m structure. The piezoelectricity of the compositions increased after [001]-texturing, and the enhancement was proportional to the O phase quantity. The composition (z = 0.03) exhibited the highest piezoelectric constant (d₃₃; 670 pC/N) and electromechanical coupling factor (k_p; 0.56). Piezoelectric energy harvesters were produced using the untextured and textured samples (z = 0.03). The textured harvester delivered a large power density of 26.6 mW/mm³, which was larger than that of the untextured harvester owing to the enhanced k_p and d₃₃ × g₃₃ of the textured piezoceramic. A multilayer actuator was produced using the textured sample (z = 0.03), and it exhibited a large acceleration (44.2 G) and displacement (±3,730 μm) at ±25 V. Therefore, the [001]-textured (KN_0.47L_0.03)NS-CSZ piezoceramic is suitable for piezoelectric energy harvesters and actuators.

A monolayer of Sr₂Nb₃O₁₀ (SNO) is deposited on the Pt/Ti/SiO₂/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na_1-xK_x)NbO₃ (NKN) film at 350 ℃. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 ℃, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pm·V^-1, and a leakage current density of 6.47 × 10^-7 A·cm^-2 at -0.2 MV·cm^-1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 ℃. Hence, the NKN films grown on the SNO seed-layer at 350 ℃ can be applied to electronic devices with flexible polymer substrates.