Spiking neural network (SNN), widely known as the third-generation neural network, has been frequently investigated due to its excellent spatiotemporal information processing capability, high biological plausibility, and low energy consumption characteristics. Analogous to the working mechanism of human brain, the SNN system transmits information through the spiking action of neurons. Therefore, artificial neurons are critical building blocks for constructing SNN in hardware. Memristors are drawing growing attention due to low consumption, high speed, and nonlinearity characteristics, which are recently introduced to mimic the functions of biological neurons. Researchers have proposed multifarious memristive materials including organic materials, inorganic materials, or even two-dimensional materials. Taking advantage of the unique electrical behavior of these materials, several neuron models are successfully implemented, such as Hodgkin–Huxley model, leaky integrate-and-fire model and integrate-and-fire model. In this review, the recent reports of artificial neurons based on memristive devices are discussed. In addition, we highlight the models and applications through combining artificial neuronal devices with sensors or other electronic devices. Finally, the future challenges and outlooks of memristor-based artificial neurons are discussed, and the development of hardware implementation of brain-like intelligence system based on SNN is also prospected.

To further improve the quantum efficiency of atomically thin transition metal dichalcogenides (TMDs) is crucial for the realization of high-performance optoelectronic applications. To this regard, a few chemical or physical approaches such as superacid treatment, electrical gating, dielectric screening, and laser irradiation have been developed. In particular, the laser irradiation appears to be a more efficient way with good processability and spatial selectivity. However, the underlying mechanism especially about whether chemisorption or physisorption plays a more important role is still debatable. Here, we unravel the mystery of laser irradiation induced photoluminescence enhancement in monolayer WS₂ by precisely controlling irradiation time and environment. It is found that the synergetic effect of physisorption and chemisorption is responsible for the photoluminescence enhancement, where the physisorption dominates with more than 74% contribution. The comprehensive understanding of the adsorption mechanism in laser-irradiated TMDs may trigger the potential applications for patterned light source, effective photosensor and ultrathin optical memory.