The full E-field control of multiferroic interfacial magnetism is a long-standing challenge for micro-electromechanical systems (MEMS) and has the potential to transform electronics operation mechanisms. When scaling down conventional complementary metal-oxide semiconductor (CMOS) devices, increased heating dissipation becomes a top concern. Combining the highly correlated ferroic orders, notably the strongly coupled interfacial magnetoelectric (ME) interactions, may lead to devices beyond CMOS. These devices use the electric field to regulate magnetization, which opens up the prospect of downsizing, improved performance, and lower power consumption. To broadly survey this tremendous scope within the last five years, this review summarizes advances in voltage control of interfacial magnetism (VCIM) with various material system selection; controlling effects with different gating methods are also explored. Five classic mechanisms are demonstrated: strain, exchange bias, orbital reconstruction, and the electrostatic and electrochemical. The encouraging photovoltaic approach is also discussed. Each method’s capabilities and application scenarios are compared. Analyses of the comprehensive gating results of different magnetic coupling effects such as perpendicular magnetic anisotropy (PMA) and Ruderman–Kittel–Kasuya–Yosida (RKKY) are additionally made. At last, controlling of skyrmions and two-dimensional (2D) material magnetization is summarized, indicating that E-field gating offers a universal approach with few limitations for material selection. These results point to potential for E-field control interfacial magnetism and predict significant future advancements for spintronics.

Flexible ferrite film has high potential applications in electronic skins and wearable devices. However, it is an enormous challenge to fabricate flexible ferrite film because of its high fragility. This work uses a novel etching sacrificial Sr₃Al₂O₆ (SAO) layer to synthesize flexible Mn_0.5Zn_0.5Fe₂O₄ (MZFO) ferrite film. The MZFO film remains its single crystal structure after being transferred onto a flexible substrate. Owing to the great lattice mismatch between SAO and MZFO, the as-grown and transferred MZFO films exhibit the difference in magnetic properties, which is more sensitive along out-of-plane direction. The controllable magnetic properties of the film under the bending test are characterized by ferromagnetic resonance (FMR). A huge FMR field (H_r) shift of 704 Oe is achieved along out-of-plane direction when the bending radii are 5 mm. Meanwhile, the FMR linewidth (δH) of bent MZFO film (1267 Oe) is about 4 times higher than that of the unbent film (310 Oe). These controllable changes mainly come from the contribution of the two magnon scattering (TMS) effect. Finally, the H_r and δH almost return to their initial states when the stress is released, indicating a great recoverability.

Piezoelectric ceramics exhibit three conventional piezoelectric coefficients, i.e., d₃₃, d₃₁, d₁₅, due to their crystal symmetry. Unconventional piezoelectric coefficients, such as d₁₁, d₁₂, d₁₃, d₁₄, d₁₆, etc., can only be extracted from piezoelectric single crystals of special symmetry with specific cut direction. Here we demonstrate a rotated poling method to realize unconventional piezoelectric coefficients in perovskite piezoelectric ceramics. This method is elaborated in theory and experimentally proven to be effective. Full nonzero piezoelectric coefficients in the 3 × 6 piezoelectric coefficients matrix can be obtained by combining these “quasi (effective) piezoelectric coefficients” with the conventional piezoelectric coefficients, which would expand applications in a wide variety of piezoelectric devices.