An efficient room-temperature self-powered, broadband (300 ​nm–1100 nm) photodetector based on a CuO–TiO₂/TiO₂/p-Si(100) heterostructure is demonstrated. The CuO–TiO₂ nanocomposites were grown in a two-zone horizontal tube furnace on a 40 ​nm TiO₂ thin film deposited on a p-type Si(100) substrate. The CuO–TiO₂/TiO₂/p-Si(100) devices exhibited excellent rectification characteristics under dark and individual photo-illumination conditions. The devices showed remarkable photo-response under broadband (300–1100 ​nm) light illumination at zero bias voltage, indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations. The maximum response of the devices is observed at 300 ​nm for an illumination power of 10 ​W. The response and recovery times were calculated as 86 ​ms and 78 ​ms, respectively. Moreover, under a small bias, the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions. The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices. Under illumination conditions, the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO₂/TiO₂ interface. These characteristics make the CuO–TiO₂/TiO₂ broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.